FQP50N06 - 60V 52.4A N-Channel MOSFET
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Features:
Model: FQP50N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 120 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 52.4 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 31 nC
Maximum Drain-Source On-State Resistance (Rds): 0.022 Ohm
Package: TO220
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Tags: 50A, N-Channel, N Channel Power MOSFET, FQP50N06, 50N06 fqp50n06, 60v, 52.4a, n-channel, mosfet, mosfets